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NTLJS1102P
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – t v 5 s (Note 3)
Junction ? to ? Ambient – Steady State min Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
65
38
180
Unit
° C/W
3. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface ? mounted on FR4 board using the minimum recommended pad size (Cu area = 30 mm 2 [2 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
I D = ? 250 m A, Ref to 25 ° C
? 8.0
? 7.2
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 8V
T J = 25 ° C
T J = 85 ° C
? 1.0
? 10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 6V
± 0.1
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ? 250 m A
? 0.29
2.7
? 0.72
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = ? 4.5 V, I D = ? 6.2 A
25
36
m W
V GS = ? 4.5 V, I D = ? 3.0 A
V GS = ? 2.5 V, I D = ? 5.5 A
V GS = ? 2.5 V, I D = ? 3.0 A
V GS = ? 1.8 V, I D = ? 3.0 A
V GS = ? 1.5 V, I D = ? 1.0 A
V GS = ? 1.2 V, I D = ? 0.2 A
25
34
34
45
55
80
36
45
45
68
90
300
Forward Transconductance
g FS
V DS = ? 4 V, I D = ? 6.2 A
14.3
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V GS = 0 V, f = 1 MHz, V DS = ? 4 V
1585
350
185
pF
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 4 V;
I D = ? 6.2 A
15.7
0.8
1.9
3.3
25
nC
SWITCHING CHARACTERISTICS, V GS = 4.5 V (Note 6)
Turn ? On Delay Time
t D(ON)
8.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DS = ? 4 V,
I D = ? 6.2 A, R G = 1 W
41
80
70
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
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